TITLE

Necessity of Ga prelayers in GaAs/Ge growth using gas-source molecular beam epitaxy

AUTHOR(S)
Fitzgerald, E.A.; Kuo, J.M.; Xie, Y.H.; Silverman, P.J.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p733
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates gas-source molecular beam epitaxy growth of GaAs on germanium (Ge) surface. Use of self-terminating arsenic layer for epitaxy growth; Production of poor GaAs surface morphology from arsenic layer; Effects of Ge monolayer on Ge surface.
ACCESSION #
4319403

 

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