TITLE

Ambipolar diffusion anisotropy induced by defects in nipi-doped In[sub 0.2]Ga[sub 0.8]As/GaAs

AUTHOR(S)
Rich, D.H.; Rammohan, K.; Tang, Y.; Lin, H.T.; Maserjian, J.; Grunthaner, F.J.; Larsson, A.; Borenstain, S.I.
PUB. DATE
February 1994
SOURCE
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p730
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the influence of strain-induced defects on the transport of electrons and holes in delta-doped InGaAs/GaAs multiple quantum well system. Application of semiconductor defects in electron mobility transistors; Use of electron-beam-induced absorption modulation.
ACCESSION #
4319402

 

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