Self-organizing growth of erbium arsenide quantum dots and wires in gallium arsenide by

Singer, K.E.; Rutter, P.; Peaker, A.R.; Wright, A.C.
February 1994
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p707
Academic Journal
Examines the growth of erbium (Er)-doped gallium arsenide by molecular beam epitaxy. Formation of uniform crystalline microprecipitates of ErAs; Reduction of arsenic to gallium flux ratio; Incorporation of Er for optical emitter production.


Related Articles

  • Carbon tetrabromide carbon doping of molecular beam epitaxial (GaAs) films. Hoke, W.E.; Weir, D.G.; Lemonias, P.J.; Hendriks, H.T. // Applied Physics Letters;1/10/1994, Vol. 64 Issue 2, p202 

    Examines the carbon doping of molecular beam epitaxial gallium arsenide films using carbon tetrabromide vapor. Improvements at the highest doping levels; Transitions displayed by the created doping pulses; Degradation of films doped with evaporated carbon due to surface recombination of...

  • Investigation of Distribution and Redistribution of Silicon in Thin Doped Gallium-Arsenide Layers Grown by Molecular Beam Epitaxy on Substrates with (100), (111)Ga, and (111)As Orientations. Galiev, G. B.; Kaminskii, V. �.; Mokerov, V. G.; Nevolin, V. K.; Saraikin, V. V.; Slepnev, Yu. V. // Semiconductors;Jul2000, Vol. 34 Issue 7, p741 

    The distribution of silicon in GaAs was investigated by secondary-ion mass spectrometry (SIMS) before and after the thermal annealing of thin doped GaAs layers grown by molecular beam epitaxy on substrates with (100), (111)Ga, and (111)As orientations. The surface relief pattern of the grown...

  • Optimization of carbon incorporation in GaAs during molecular beam epitaxial growth. Nörenberg, H.; Mazuelas, A.; Hagenstein, K.; Hey, R.; Grahn, H. T. // Applied Physics A: Materials Science & Processing;1996, Vol. 62 Issue 5, p459 

    Carbon-doped GaAs with dopant concentrations up to about 10[sup 20] cm[sup -3] has been grown by molecular beam epitaxy. Above a critical carbon concentration, which depends on the deposition parameters, the surface deteriorates and loses its mirror-like appearance. From X-ray diffractometry and...

  • Carbon doping for AlGaAs/GaAs heterojunction bipolar transistors by molecular-beam epitaxy. Ito, Hiroshi; Nakajima, Osaake; Ishibashi, Tadao // Applied Physics Letters;4/26/1993, Vol. 62 Issue 17, p2099 

    Investigates AlGaAs/GaAs heterojunction bipolar transistors carbon doping through molecular-beam epitaxy. Increase in proportion of inactive carbon atoms in GaAs layers; Dependence of mobility on free-carrier concentration; Evaluation of the behavior of carbon dopant in the GaAs layer.

  • Effects of indium doping on crystalline qualities of GaAs on Si by molecular beam epitaxy. Ohbu, I.; Ishino, M.; Mozume, T. // Applied Physics Letters;1/23/1989, Vol. 54 Issue 4, p396 

    The effects of In doping on crystalline qualities are demonstrated in the heteroepitaxy of GaAs on Si grown by molecular beam epitaxy. The etch pit density of the GaAs layers doped with In at 8×1017 cm-3 decreased by a factor of 7 compared with undoped GaAs layers. Dark regions observed in...

  • Masked, anisotropic thermal etching and regrowth for in situ patterning of compound semiconductors. Warren, A. C.; Woodall, J. M.; Fossum, E. R.; Pettit, G. D.; Kirchner, P. D.; McInturff, D. T. // Applied Physics Letters;11/30/1987, Vol. 51 Issue 22, p1818 

    To produce well-defined device structures having ultrasmall areas in compound semiconductors, it is necessary that lateral variations in doping and composition be realizable having interfacial quality comparable to that presently achieved vertically with techniques such as molecular beam epitaxy...

  • Kinetic model of GaAs(100) growth from molecular beams. Karpov, S. Yu.; Maiorov, M. A. // Technical Physics Letters;Jan97, Vol. 23 Issue 1, p38 

    A kinetic model for the growth of GaAs(100) by molecular beam epitaxy is constructed. The elementary processes at the surface are analyzed, including chemisorption of atoms and molecules, incorporation of atoms into the crystal, decomposition of the crystal, and desorption of group-III atoms and...

  • Structure and properties of InGaAs layers grown by low-temperature molecular-beam epitaxy. Vilisova, M. D.; Ivonin, I. V.; Lavrentieva, L. G.; Subach, S. V.; Yakubenya, M. P.; Preobrazhenskii, V. V.; Putyato, M. A.; Semyagin, B. R.; Bert, N. A.; Musikhin, Yu. G.; Chaldyshev, V. V. // Semiconductors;Aug99, Vol. 33 Issue 8, p824 

    This paper describes studies of InGaAs layers grown by molecular-beam epitaxy on InP (100) substrates at temperatures of 150-480 �C using various arsenic fluxes. It was found that lowering the epitaxy temperature leads to changes in the growth surface, trapping of excess arsenic, and an...

  • Elimination of ‘‘pair’’ defects from GaAs layers grown by molecular beam epitaxy. Chai, Young G.; Pao, Y-C.; Hierl, T. // Applied Physics Letters;12/15/1985, Vol. 47 Issue 12, p1327 

    In addition to "oval" defects, "pair" defects are observed on molecular beam epitaxially grown GaAs wafers. In this letter it is demonstrated that these defects originate from sulfur on the substrate surface caused by a 4:1:1 (H[sub 2]SO[sub 4]:H[sub 2]O[sub 2]:H[sub 2]O} etch, The defects can...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics