High reflectivity 1.55 mum (Al)GaSb/AlSb Bragg mirror grown by molecular beam epitaxy

Lambert, B.; Toudic, Y.; Rouillard, Y.; Baudet, M.; Guenais, B.; Deveaud, B.; Valiente, I.
February 1994
Applied Physics Letters;2/7/1994, Vol. 64 Issue 6, p690
Academic Journal
Examines the molecular beam epitaxy growth of (aluminum)gallium antimonide/aluminum antimonide ((Al)GaSb/AlSb) Bragg mirrors. Use of Bragg reflectors as light-emitting diodes; Growth of (Al)GaSb/AlSb on gallium arsenide substrate.


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