Residues, polycrystalline silicon voids, and active area damage with the polycrystalline silicon

Mathews, Viju K.; Fazan, Pierre C.; Maddox, Roy L.
January 1994
Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p94
Academic Journal
Investigates the polycrystalline silicon buffered local oxidation of silicon isolation process. Effectiveness of various post-field oxidation mask deprocessing sequences; Examination of residues, polycrystalline silicon voids and active area damage; Removal of a sacrificial oxide.


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