TITLE

Residues, polycrystalline silicon voids, and active area damage with the polycrystalline silicon

AUTHOR(S)
Mathews, Viju K.; Fazan, Pierre C.; Maddox, Roy L.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p94
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the polycrystalline silicon buffered local oxidation of silicon isolation process. Effectiveness of various post-field oxidation mask deprocessing sequences; Examination of residues, polycrystalline silicon voids and active area damage; Removal of a sacrificial oxide.
ACCESSION #
4319367

 

Related Articles

  • Modulated optical reflectance: A method for characterizing polycrystalline silicon. Alpern, P.; Kakoschke, R.; Schöninger, M.; Wurm, S. // Applied Physics Letters;8/15/1988, Vol. 53 Issue 7, p577 

    We describe modulated optical reflectance experiments with polycrystalline silicon layers treated by rapid optical annealing. The layers were deposited on SiO2 or on crystalline Si. It turns out that the modulated optical reflectance signals are very sensitive to small variations of the grain...

  • Oxidation of silicon carbide and the formation of silica polymorphs.  // Journal of Materials Research;Oct2006, Vol. 21 Issue 10, p16 

    The oxidation of single-crystal and relatively pure polycrystalline silicon carbide, between 973 and 2053 K, resulted in the formation of cristobalite, quartz, or tridymite, which are the stable crystalline polymorphs of silica (SiO2) at ambient pressure. The oxide scales were found to be pure...

  • Potential imaging of Si/HfO2/polycrystalline silicon gate stacks: Evidence for an oxide dipole. Ludeke, R.; Narayanan, V.; Gusev, E. P.; Cartier, E.; Chey, S. J. // Applied Physics Letters;3/21/2005, Vol. 86 Issue 12, p122901 

    Surface potential profiles of the junction area of a cleaved n-Si(100)/HfO2/p+-polycrystalline silicon (poly-Si) gate stack reveal a dipole potential in the oxide, hole trapping at the HfO2/poly-Si interface, with the Fermi level ∼0.4 eV below the Si conduction bandedge and enhanced and...

  • Scanning room-temperature photoluminescence in polycrystalline silicon. Koshka, Y.; Ostapenko, S. // Applied Physics Letters;3/15/1999, Vol. 74 Issue 11, p1555 

    Studies the scanning room-temperature photoluminescence in polycrystalline silicon. Band-to-band emission; Deep defect luminescence; Distribution of minority carrier diffusion length in the wafer bulk.

  • Growth of SiC using hexamethyldisilane in a hydrogen-poor ambient. Nordell, N.; Nishino, S. // Applied Physics Letters;3/28/1994, Vol. 64 Issue 13, p1647 

    Investigates the growth of silicon carbide using hexamethyldisilane in a hydrogen-poor ambient. Obtainment of polycrystalline layers at low growth temperatures; Improvement of crystallinity at high temperatures; Orientation of the grains with respect to the surfaces.

  • The density of localized states at the semi-insulating polycrystalline and single-crystal silicon interface. Brunson, Kevin M.; Sands, David; Thomas, Clive B.; Reehal, Hari S. // Journal of Applied Physics;11/15/1986, Vol. 60 Issue 10, p3599 

    Presents a study that measured the density of localized states at the interface between as-deposited 51 at. % semi-insulating polycrystalline silicon and silicon. Use of the conductance technique; Details of capacitance-voltage and conductance-voltage characteristics; Interface state response.

  • Evidence for the formation of polycrystalline silicon by argon implantation and its passivation by atomic hydrogen. Ringel, S. A.; Chien, H. C.; Ashok, S. // Applied Physics Letters;9/22/1986, Vol. 49 Issue 12, p728 

    Evidence is presented through electrical measurements for the presence of microcrystallites in the surface damage layer resulting from the implantation of 20 keV Ar at a moderate dose (1013 cm-2). Low-energy (0.4 keV) atomic hydrogen is found to passivate the polycrystalline grain boundaries...

  • Optical behavior of textured silicon. Nussbaumer, H.; Willeke, G.; Bucher, E. // Journal of Applied Physics;2/15/1994, Vol. 75 Issue 4, p2202 

    Presents a study that examined the optical behavior of polycrystalline SILSO silicon wafers with a mechanically V-grooved surface Texturization process; Optical path length in the weakly absorbing part of the spectrum; Enhanced reflectance in the nonabsorbing spectral region.

  • Improvement of electrical characteristics of polycrystalline silicon-contacted diodes after forward bias stressing. Wu, S. L.; Lee, C. L.; Lei, T. F. // Applied Physics Letters;10/29/1990, Vol. 57 Issue 18, p1904 

    Improvement of the electrical characteristics of polycrystalline silicon (polysilicon) contacted n+-p diodes after application of a forward bias stressing is reported. The improvement existed for diodes whose emitter-implanted doses of arsenic were larger than 6×1015 cm-2 for HF-dipped...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics