Resonance effects in Raman scattering from InAs/AlSb quantum wells

Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P.
January 1994
Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p82
Academic Journal
Investigates GaSb-capped AlSb/InAs/AlSb quantum wells using resonant Raman scattering. Growth of the quantum wells by molecular beam epitaxy; Oxidation of the underlying Aluminum antimonide; Formation of indium antimonide-like interfaces.


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