TITLE

Resonance effects in Raman scattering from InAs/AlSb quantum wells

AUTHOR(S)
Wagner, J.; Schmitz, J.; Ralston, J.D.; Koidl, P.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p82
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates GaSb-capped AlSb/InAs/AlSb quantum wells using resonant Raman scattering. Growth of the quantum wells by molecular beam epitaxy; Oxidation of the underlying Aluminum antimonide; Formation of indium antimonide-like interfaces.
ACCESSION #
4319363

 

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