Intrinsic current bistability in InAs/Al[sub x]Ga[sub 1 - x]Sb resonant tunneling devices

Chow, D.H.; Schulman, J.N.
January 1994
Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p76
Academic Journal
Examines the current bistability in InAs/Al[sub x]Ga[sub 1-x]Sb heterostructure resonant tunneling devices. Characteristic response times of resonant tunneling devices; Accumulation of electrons and holes in the quantum well/barrier region; Dependence of the steady-state charge distribution on the bias history of the device.


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