TITLE

Characterization of deep traps in semi-insulators by current transients

AUTHOR(S)
Maimon, S.; Schacham, S.E.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p70
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the deep traps in semi-insulators using a junction composed of an epitaxial p-type layer. Release of reverse bias electrons from the traps resulting in a current transient; Acceleration of the long current decay; Difference between trap energy and the bottom of the conduction band.
ACCESSION #
4319359

 

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