TITLE

Comparison of graded and abrupt junction In[sub 0.53]Ga[sub 0.47]As heterojunction bipolar

AUTHOR(S)
Baquedano, J.A.; Levi, A.F.J.; Jalali, B.
PUB. DATE
January 1994
SOURCE
Applied Physics Letters;1/3/1994, Vol. 64 Issue 1, p67
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Compares graded and abrupt junction In[sub 0.53]Ga[sub 0.47]As heterojunction bipolar transistors (HBT). Results of numerically simulating charge transport in graded and abrupt junction n-p-n HBT lattice matched in indium phosphide; Reduction of the base resistance; Advantages of graded emitter for digital circuit applications.
ACCESSION #
4319358

 

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