SiO[sub 2]/Si(100) interface studied by Al Kalpha x-ray and synchrotron radiation photoelectron

Lu, Z.H.; Graham, M.J.; Jiang, D.T.; Tan, K.H.
November 1993
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2941
Academic Journal
Examines the suboxide distribution at silicon dioxide/silicon (100) interfaces. Use of synchrotron radiation photoemission and aluminum Kalpha photoelectron spectroscopy; Chemical shifts displayed by several silicon ions; Factors considered as causes of the discrepancy between the number of total atoms and suboxide atoms.


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