SiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasma

Li, P.W.; Yang, E.S.
November 1993
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2938
Academic Journal
Examines the oxidation of silicon germanide at low temperatures by electron cyclotron resonance (ECR) plasma. Electrical properties of the materials; Indication of the high frequency and quasistatic capacitance-voltage of the alloy; Comparison of characteristics with ECR grown metal-oxide semiconductor capacitors on silicon with an aluminum gate.


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