TITLE

SiGe gate oxide prepared at low-temperatures in an electron cyclotron resonance plasma

AUTHOR(S)
Li, P.W.; Yang, E.S.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2938
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the oxidation of silicon germanide at low temperatures by electron cyclotron resonance (ECR) plasma. Electrical properties of the materials; Indication of the high frequency and quasistatic capacitance-voltage of the alloy; Comparison of characteristics with ECR grown metal-oxide semiconductor capacitors on silicon with an aluminum gate.
ACCESSION #
4319319

 

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