Molecular beam epitaxial growth of CdZnS using elemental sources

Wu, B.J.; Cheng, H.; Guha, S.; Haase, M.A.; De Puydt, J.M.; Meis-Haugen, G.; Qiu, J.
November 1993
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2935
Academic Journal
Examines the growth of Cd[sub 1-x]Zn[sub x]S diodes on gallium arsenide substrates by molecular beam epitaxy using elemental zinc, cadmium, and sulfur sources. Analysis of the incorporation competition between cadmium and zinc under different sulfur flux conditions; Sulfur etching of the GaAs substrates generating high density of pits on the surface.


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