TITLE

Optical investigation of confinement and strain effects in CdTe/(CdMg)Te quantum wells

AUTHOR(S)
Kuhn-Heinrich, B.; Ossau, W.; Heinke, H.; Fischer, F.; Litz, T.; Waag, A.; Landwehr, G.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2932
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the confinement and strain effects in cadmium telluride/(CdMg)Te quantum wells. Photoluminescence efficiency of the materials; Significance of large band gap at the interface in confinement effects; Functional dependence of the localization energy of donor bound excitons on the well thickness.
ACCESSION #
4319316

 

Related Articles

  • Optical emission from GaAs/AlGaAs p-i-n multiquantum well structures grown on patterned Si.... Murray, R.; Roberts, C.; Woodbridge, K.; Barnes, P.; Parry, G.; Norman, C. // Applied Physics Letters;6/7/1993, Vol. 62 Issue 23, p2929 

    Examines the strain in gallium arsenide/aluminum gallium arsenide multiquantum well (MQW) structures. Growth of MQW structures on patterned silicon substrate; Use of low-temperature photoluminescence and cathodoluminescence; Effect of growing the epitaxial GaAs on silicon islands.

  • Depth profiles of strain in In[sub 0.10]Ga[sub 0.90]As/GaAs multiquantum well structures.... Griffiths, C.O.; Cooper, S.L. // Applied Physics Letters;10/11/1993, Vol. 63 Issue 15, p2123 

    Examines the strain effect in indium gallium arsenide (InGaAs)/GaAs multiple quantum well (QW) structures by photoluminescence (PL) measurements. Alteration of well contributions at different depths to the PL spectra; Effect of pump wavelength on energy peaks in QW PL spectra; Evidence of...

  • Mediation of strain from In[sub 0.36]Ga[sub 0.64]As layers through GaAs barriers in multiple.... Ekenstedt, M.J.; Chen, W.Q. // Applied Physics Letters;12/19/1994, Vol. 65 Issue 25, p3242 

    Examines the strain mediation in multiple quantum well structures consisting of In[sub 0.36]Ga[sub 0.64]As layers separated by gallium arsenide barriers using photoluminescence. Evaluation of the strain in layers grown by molecular beam epitaxy; Relationship of strain mediation and number of...

  • Temperature dependence of threshold of strained quantum well lasers. Dutta, N.K.; Lopata, J.; Sivco, D.L.; Cho, A.Y. // Applied Physics Letters;3/18/1991, Vol. 58 Issue 11, p1125 

    Analyzes the temperature dependence of threshold current of strained quantum well lasers both experimentally and theoretically. Measurement of carrier densities at threshold of the lasers using very short current pulse injection; Simplified calculation of the radiative, nonradiative...

  • Optical gain in ordered GaInP/AlGaInP quantum wells. Moritz, A.; Hangleiter, A. // Applied Physics Letters;6/12/1995, Vol. 66 Issue 24, p3340 

    Presents optical gain calculations for strained and ordered gallium indium phosphide and aluminum gallium indium phosphide quantum wells. Application of six-band kp model based on Luttinger-Kohn Hamiltonian system; Correlation between gain and carrier density; Influence of strain on gain...

  • Optical and structural properties of In0.64Ga0.36As/AlxGa1-xAs(x≤0.2)/AlAsSb coupled double quantum wells. Shin-ichiro Gozu; Teruo Mozume; Hiroshi Ishikawa // AIP Conference Proceedings;Dec2013, Vol. 1566 Issue 1, p451 

    We have studied optical and structural properties of In0.64Ga0.36As/AlxGa1-xAs(x≤0.2)/AlAsSb coupled double quantum wells (CDQWs) for controlling the interband transition energy of CDQWs as well as changing the residual strain of CDQWs. By changing Al composition of AlxGa1-xAs center...

  • On overannealing of GaIn(N)As/Ga(N)As multiple quantum wells grown by molecular beam epitaxy. Liu, H. F.; Chua, S. J.; Xiang, N. // Journal of Applied Physics;7/1/2007, Vol. 102 Issue 1, p013504 

    Evolution of photoluminescence (PL) and strain is investigated in GaIn(N)As/Ga(N)As multiple quantum wells (MQWs) over a wide range of annealing temperatures from 700 to 900 °C. We observe two optimal annealing temperatures (Topt) that result in reduced PL linewidth and increased PL intensity...

  • Strain effects in lattice-mismatched In[sub x]Ga[sub 1-x]As/In[sub y]Al[sub 1-y]As coupled double quantum wells. Kim, T. W.; Jung, M.; Lee, D. U.; Lim, Y. S.; Lee, J. Y. // Applied Physics Letters;7/6/1998, Vol. 73 Issue 1 

    Transmission electron microscopy (TEM) and Raman scattering spectroscopy measurements were performed to investigate strain effects in lattice-mismatched In[sub x]Ga[sub 1-x]As/In[sub y]Al[sub 1-y]As modulation-doped coupled double quantum wells. The high-resolution TEM images showed that a...

  • Improved performance of compressively as well as tensile strained quantum-well lasers. Krijn, M.P.C.M.; 't Hooft, G.W. // Applied Physics Letters;10/12/1992, Vol. 61 Issue 15, p1772 

    Examines the effects of strain on the laser characteristics of quantum well lasers. Determination of threshold current density and in-plane energy dispersion; Shift in the position of heavy-hole subbands; Separation of the heavy-hole and light-hole subband levels.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics