Point defect generation during high temperature annealing of the Si-SiO[sub 2] interface

Devine, R.A.B.; Mathiot, D.; Warren, W.L.; Fleetwood, D.M.; Aspar, B.
November 1993
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2926
Academic Journal
Examines the point defects responsible for annealing induced oxide degradation in silicon-silicon dioxide interfaces. Techniques used to reveal the presence of oxygen-vacancy centers; Development of a model based on chemical energy arguments; Anticipation of annealing activated defect creation.


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