TITLE

Strain relaxation in high-speed p-i-n photodetectors with In[sub 0.2]Ga[sub 0.8]As/GaAs multiple

AUTHOR(S)
Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2920
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the strain relaxation in high speed photodetectors with In[sub 0.2]Ga[sub 0.8]As/gallium arsenide multiple quantum wells. Use of high-resolution x-ray diffraction and photocurrent spectroscopy; Influence of the relaxation on the optoelectronic and electronic properties.
ACCESSION #
4319311

 

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