Strain relaxation in high-speed p-i-n photodetectors with In[sub 0.2]Ga[sub 0.8]As/GaAs multiple

Bender, G.; Larkins, E.C.; Schneider, H.; Ralston, J.D.; Koidl, P.
November 1993
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2920
Academic Journal
Examines the strain relaxation in high speed photodetectors with In[sub 0.2]Ga[sub 0.8]As/gallium arsenide multiple quantum wells. Use of high-resolution x-ray diffraction and photocurrent spectroscopy; Influence of the relaxation on the optoelectronic and electronic properties.


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