TITLE

Noncontact characterization for grown-in defects in Czochralski silicon wafers with a

AUTHOR(S)
Ikeda, Naoki; Buczkowski, Andrzej; Shimura, Fumio
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2914
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Examines the effect of grown-in defects in as-polished Czochralski silicon wafers upon the recombination lifetime. Use of a non-contact laser/microwave photoconductance method; Separation of bulk and surface components using an algorithm; Correlation of the recombination lifetime to the surface microroughness of the materials.
ACCESSION #
4319309

 

Related Articles

  • Dimer-flipping-assisted diffusion on a Si(001) surface. Zi, J.; Min, B. J.; Min, B.J.; Lu, Y.; Wang, C. Z.; Wang, C.Z.; Ho, K. M.; Ho, K.M. // Applied Physics Letters;12/18/2000, Vol. 77 Issue 25 

    The binding sites and diffusion pathways of Si adatoms on a c(4x2) reconstructed Si(001) surface are investigated by a tight-binding method with an environment-dependent silicon potential in conjunction with ab initio calculations using the Car-Parrinello method. A new diffusion pathway along...

  • Studies of atomic and molecular fluorine reactions on silicon surfaces. Stinespring, C. D.; Freedman, A. // Applied Physics Letters;3/17/1986, Vol. 48 Issue 11, p718 

    X-ray photoelectron spectroscopy (XPS) and an ultrahigh vacuum compatible microwave discharge effusive beam source have been used to study the reactions of atomic and molecular fluorine on Si(111) surfaces. Fluorine uptake and changes in binding energy and peak shape for the Si 2p and F 1s XPS...

  • Silicon surface roughness—Structural observation by reflection electron microscopy. Honda, Kouichirou; Ohsawa, Akira; Toyokura, Nobuo // Applied Physics Letters;3/24/1986, Vol. 48 Issue 12, p779 

    Surface roughness of polished silicon wafers was observed by reflection electron microscopy. Small steps were clearly resolved as fringe pattern, and rather rough steps of 1.2–1.6 nm in height and 200–500 nm in interval were observed as dark and bright bands. This is the first...

  • Roughening of Si (111) surface under high-temperature thermal cycling. Zuo, J.-K.; Harper, R. A.; Wang, G.-C. // Applied Physics Letters;7/27/1987, Vol. 51 Issue 4, p250 

    High-resolution low-energy electron diffraction has been used to study the generation of defects on the surface of commercial Si (111) wafers under high-temperature thermal cycling in ultrahigh vacuum. We observed a gradual increase of single-atomic step density from 0.15 to 0.30% after several...

  • Synchrotron x-ray standing-wave study of arsenic on Si(100). Zegenhagen, J.; Patel, J. R.; Kincaid, B. M.; Golovchenko, J. A.; Mock, J. B.; Freeland, P. E.; Malik, R. J.; Huang, K.-G. // Applied Physics Letters;7/18/1988, Vol. 53 Issue 3, p252 

    The position of As atoms on the silicon(100) surface has been determined using the x-ray standing-wave technique and synchrotron radiation. Since the experiments were performed in air, the As-covered (100) surface was capped with amorphous silicon. The results of the measurements are in...

  • Metal�Semiconductor Transitions Induced by Adsorption of Alkali Metals on the Si(001) Surface. Davydov, S. Yu. // Physics of the Solid State;Jun2000, Vol. 42 Issue 6, p1164 

    The changes in the electronic structure of the surface layer of a semiconductor substrate have been studied with allowance made for the indirect and dipole�dipole interactions between adatoms. The conditions for the formation and suppression of gaps in the energy band of surface states of...

  • Fabrication of arrays of large step-free regions on Si(001). Tanaka, So; Umbach, C. C.; Blakely, Jack M.; Tromp, Ruud M.; Mankos, M. // Applied Physics Letters;8/26/1996, Vol. 69 Issue 9, p1235 

    In this letter we describe a method for producing large areas of Si(001) surfaces which are (i) free of atomic steps and (ii) arranged in regular patterns on the wafer. The first step is the fabrication of a two-dimensional grating structure using e-beam lithography and reactive ion etching....

  • Impurity trapping and gettering in amorphous silicon. Coffa, S.; Poate, J.M.; Jacobson, D.C.; Polman, A. // Applied Physics Letters;6/24/1991, Vol. 58 Issue 25, p2916 

    Reports that palladium atoms have been gettered from the bulk of an amorphous Si layer to an ion-implanted surface region. Redistribution of Pd within the layer and relaxation or substantial defect annihilation in the amorphous silicon.

  • Is the c(4x4) reconstruction of Si(001) associated with the presence of carbon? Miki, Kazushi; Sakamoto, Kunihiro // Applied Physics Letters;12/1/1997, Vol. 71 Issue 22, p3266 

    Demonstrates the reconstruction of hydrogen-terminated Si(001) surface around 500 degrees Celsius, c(4x4). Association of c(4x4) reconstruction with carbon contamination; Insufficiency of the carbon concentration for carbon atoms to be a component of the c(4x4) structure; Lack of effect of...

  • Effect of surface proximity on end-of-range loop dissolution in silicon. Raman, R.; Law, M. E. // Applied Physics Letters;3/15/1999, Vol. 74 Issue 11, p1591 

    Studies the effect of surface proximity on end-of-range loop dissolution in silicon. Formation of a layer of dislocation loops; Dicing of the wafer; Loops' maintenance of a supersaturation of interstitials.

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics