TITLE

Photoelectron spectroscopy measurements of the band gap in porous silicon

AUTHOR(S)
van Buuren, T.; Tiedje, T.; Dahn, J.R.; Way, B.M.
PUB. DATE
November 1993
SOURCE
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2911
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Measures the conduction and valence band gap energies of porous silicon (Si). Use of x-ray absorption and photoemission spectroscopy; Comparison of results with the quantum confinement model for the optical properties of porous Si; Absence of oxygen in the as-prepared materials.
ACCESSION #
4319308

 

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