Optically active three-dimensionally confined structures realized via molecular beam epitaxical

Rajkumar, K.C.; Madhukar, A.; Rammohan, K.; Rich, D.H.; Chen, P.; Chen, L.
November 1993
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2905
Academic Journal
Presents the optically active three-dimensionally confined semiconductor volumes through the step molecular beam epitaxial growth. Fabrication of the materials on pyramidal mesas on (111)boron substrates; Use of the transmission electron microscopy; Lateral linear dimension of the emissions.


Related Articles

  • Structural and magnetic properties of Mn5Ge3 clusters in a dilute magnetic germanium matrix. Bihler, C.; Jaeger, C.; Vallaitis, T.; Gjukic, M.; Brandt, M. S.; Pippel, E.; Woltersdorf, J.; Gösele, U. // Applied Physics Letters;3/13/2006, Vol. 88 Issue 11, p112506 

    We have characterized the structural and magnetic properties of low-temperature molecular-beam epitaxy grown Ge:Mn by means of high-resolution transmission electron microscopy (HR-TEM), energy dispersive x-ray spectroscopy, and superconducting quantum interference device (SQUID) magnetometry. We...

  • Effects of ZnSe Interlayer on Properties of (CdS/ZnSe)/BeTe Type-II Super-lattices Grown by Molecular Beam Epitaxy. Li, B. S.; Akimoto, R.; Akita, K.; Hasama, H. // AIP Conference Proceedings;2005, Vol. 772 Issue 1, p1137 

    An intersubband transition (ISB-T) down to 1.57 μm is realized in (CdS/ZnSe)/BeTe super-lattices for the first time. We studied the dependence of properties of super-lattices on the ZnSe interlayer by using in situ reflection of high energy electron diffraction, high-resolution X-ray...

  • Depletion of surface accumulation charge in InN by anodic oxidation. Denisenko, A.; Pietzka, C.; Chuvilin, A.; Kaiser, U.; Lu, H.; Schaff, W. J.; Kohn, E. // Journal of Applied Physics;Feb2009, Vol. 105 Issue 3, pN.PAG 

    Si-doped InN layer by molecular beam epitaxy was subjected to anodic oxidation in 0.1 M potassium hydroxide (KOH) electrolyte and characterized by electrochemical methods to derive carrier profile at the InN surface. The obtained results were compared to the characteristics of a planar resistor...

  • α-SiC–β-SiC heteropolytype structures on Si (111). Morales, F. M.; Förster, Ch.; Ambacher, O.; Pezoldt, J. // Applied Physics Letters;11/14/2005, Vol. 87 Issue 20, p201910 

    Nanoscale α-SiC(0001) on β-SiC(111) heterostructures on Si (111) substrates fabricated by ultralow-pressure chemical vapor deposition are demonstrated. The intentional formation of the α-β structure was achieved by adjusting the SiH4 to C2H4 flux ratios to carbon rich conditions and...

  • Investigation of segregation by quantitative transmission electron microscopy. Schowalter, Marco; Rosenauer, Andreas; Litvinov, Dimitri; Gerthsen, Dagmar // Optica Applicata;2006, Vol. 36 Issue 2/3, p297 

    The segregation effect occuring during molecular beam epitaxy and metalorganic vapour phase epitaxy growth of ternary III-V semiconductor heterostructures was investigated by quantitative transmission electron microscopy (QTEM) and by simulation of optical properties. The concentration...

  • Morphology and Selected Properties of Core/Shell ZnTe-Based Nanowire Structures Containing ZnO. Gas, K.; Janik, E.; Zaleszczyk, W.; Pasternak, I.; Dynowska, E.; Fronc, K.; Kolkovsky, V.; Kret, S.; Morhange, J. F.; Reszka, A.; Wiater, M.; Caliebe, W.; Karczewski, G.; Kowalski, B. J.; Szuszkiewicz, W.; Wojtowicz, T. // Acta Physica Polonica, A.;May2011, Vol. 119 Issue 5, p612 

    We report on an approach to fabricate ZnTe-based core/shell radial heterostructures containing ZnO, as well as on some of their physical properties. The molecular beam epitaxy grown ZnTe nanowires constituted the core of the investigated structures and the ZnO shells were obtained by thermal...

  • Epitaxy of polar semiconductor Co3O4 (110): Growth, structure, and characterization. Kormondy, Kristy J.; Posadas, Agham B.; Slepko, Alexander; Dhamdhere, Ajit; Smith, David J.; Mitchell, Khadijih N.; Willett-Gies, Travis I.; Zollner, Stefan; Marshall, Luke G.; Jianshi Zhou; Demkov, Alexander A. // Journal of Applied Physics;2014, Vol. 115 Issue 24, p243708-1 

    The (110) plane of Co3O4 spinel exhibits significantly higher rates of carbon monoxide conversion due to the presence of active Co3+ species at the surface. However, experimental studies of Co3O4 (110) surfaces and interfaces have been limited by the difficulties in growing high-quality films....

  • Growth of p-type and n-type m-plane GaN by molecular beam epitaxy. McLaurin, M.; Mates, T. E.; Wu, F.; Speck, J. S. // Journal of Applied Physics;9/15/2006, Vol. 100 Issue 6, p063707 

    Plasma-assisted molecular beam epitaxial growth of Mg-doped, p-type and Si-doped, n-type m-plane GaN on 6H m-plane SiC is demonstrated. Phase-pure, m-plane GaN films exhibiting a large anisotropy in film mosaic (∼0.2° full width at half maximum, x-ray rocking curve scan taken parallel to...

  • Transient spectroscopy of InAs quantum dot molecules. Talalaev, V. G.; Tomm, J. W.; Zakharov, N. D.; Werner, P.; Novikov, B. V.; Tonkikh, A. A. // Applied Physics Letters;7/12/2004, Vol. 85 Issue 2, p284 

    Coupled pairs of InAs quantum dots are grown by molecular-beam epitaxy. Structural and optical characterization is done by means of transmission electron microscopy and photoluminescence, respectively. Photoluminescence spectra consist at least of three well-separated optical transitions that...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics