Method for the measurement of long minority carrier diffusion lengths exceeding wafer thickness

Lagowski, J.; Kontkiewicz, A.M.; Jastrzebski, L.; Edelman, P.
November 1993
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2902
Academic Journal
Presents a procedure for determining the long minority carrier diffusion lengths of semiconductors from the measurement of the surface photovoltage as a light penetration depth function. Effectiveness of the technique; Application of the method to high-purity silicon; Comparison of the procedure with other surface photovoltage methods.


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