Observation of polarization-dependent electroabsorption in (In,Ga)As/GaAs modulator structures

Sun, D.; Towe, E.; Hayduk, M.J.; Boncek, R.K.
November 1993
Applied Physics Letters;11/22/1993, Vol. 63 Issue 21, p2881
Academic Journal
Examines the anisotropic electroabsorption characteristics of strained (indium, gallium)arsenide/gallium arsenide (GaAs) layers fabricated in the form of a p-i-n light modulator. Synthesis of the modulator structure on a vicinal (110)-GaAs substrate; Dependence of the characteristics on polarization; Light rotation in passing through the [110]-oriented device.


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