Electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with

Horita, M.; Suzuki, M.; Matsushima, Y.
February 1993
Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p882
Academic Journal
Investigates the electrical and optical properties of InP grown by metalorganic vapor phase epitaxy with extremely low V/III ratios. Use of tertiarybutylphosphine as the semiconductor precursor; Characterization of the grown wafers by Nomarski microscope, Van der Pauw method and photoluminescence; Increase in acceptor content in the ratio range.


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