TITLE

Structural properties of partially relaxed In[sub x]Ga[sub 1-x]As layers grown on (100) and

AUTHOR(S)
Maigne, P.; Roth, A.P.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p873
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the structural properties of partially relaxed In[sub 0.20]Ga[sub 0.80]As layers grown simultaneously on (100) and misoriented GaAs substrates. Magnitude and direction of the tilt between layer and substrate; Influence of substrate misorientation on mismatch strain relaxation; Growth of the sample using metalorganic vapor phase epitaxy.
ACCESSION #
4319229

 

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