TITLE

In situ oxidation of a thin layer of Ge on Si(001): Observation of Geo to SiO[sub 2] transition

AUTHOR(S)
Prabhakaran, K.; Nishioka, T.; Sumitomo, K.; Kobayashi, Y.; Ogino, T.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p864
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Investigates the in situ oxidation of a thin layer of Ge grown on Si(001) surface. Use of x-ray photoelectron spectroscopy and reflection high-energy diffraction pattern methods; Observation of GeO to silicon dioxide transition upon annealing; Diffusion of Si through Ge layer.
ACCESSION #
4319226

 

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