TITLE

Microgun-pumped semiconductor laser

AUTHOR(S)
Molva, E.; Accomo, R.; Labrunie, G.; Cibert, J.; Bodin, C.; Le Si Dang; Feuillet, G.
PUB. DATE
February 1993
SOURCE
Applied Physics Letters;2/22/1993, Vol. 62 Issue 8, p796
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Demonstrates the possibility of a microgun-pumped semiconductor laser. Characteristics of the laser; Components of the compact cold electron source; Capability to use wide array of quantum-well heterostructures; Potential to cover the infrared-ultraviolet wavelength range; Importance for direct gap semiconductor use and for making compact visible laser.
ACCESSION #
4319203

 

Related Articles

  • Circularly symmetric operation of a concentric-circle-grating, surface-emitting, AlGaAs/GaAs.... Erdogan, T.; King, O. // Applied Physics Letters;4/20/1992, Vol. 60 Issue 16, p1921 

    Examines the surface-emitting semiconductor laser utilizing a concentric-circle grating (CCG) defined by electron-beam lithography. Angular divergence of the beam; Nature of polarization in the CCG surface-emitting laser; Fabrication of the gratings.

  • Resistance and sheet resistance measurements using electron beam induced current. Czerwinski, A.; Płuska, M.; Ratajczak, J.; Szerling, A.; Polish_hook, J. // Applied Physics Letters;12/11/2006, Vol. 89 Issue 24, p241919 

    A method for measurement of spatially uniform or nonuniform resistance in layers and strips, based on electron beam induced current (EBIC) technique, is described. High electron beam currents are used so that the overall resistance of the measurement circuit affects the EBIC signal. During the...

  • Extreme-UV lithography struggles to shrink chip features. HECHT, JEFF // Laser Focus World;Jun2009, Vol. 45 Issue 6, p64 

    The article focuses on the various efforts undertaken by different semiconductor laser companies, which are aimed to continue the research on conventional lithography into smaller fractions of the wavelength in the U.S. as of June 2009. It cites several initiatives that demonstrate a new way to...

  • Low threshold blue conjugated polymer lasers with first- and second-order distributed feedback. Karnutsch, C.; Gýrtner, C.; Haug, V.; Lemmer, U.; Farrell, T.; Nehls, B. S.; Scherf, U.; Wang, J.; Weimann, T.; Heliotis, G.; Pflumm, C.; deMello, J. C.; Bradley, D. D. C. // Applied Physics Letters;11/13/2006, Vol. 89 Issue 20, p201108 

    We report on the fabrication of low threshold distributed feedback (DFB) polymer lasers based on a polyfluorene derivative containing statistical binaphthyl units (BN-PFO). First- and second-order feedback lasers have been realized. The emission was tuned in the wavelength range from 438 to 459...

  • Controlled electron injection into laser wakefields with a perpendicular injection laser pulse. Wang, W.-M.; Sheng, Z.-M.; Zhang, J. // Applied Physics Letters;11/17/2008, Vol. 93 Issue 20, p201502 

    Electron injection into laser wakefields for acceleration by two orthogonally directed laser pulses is investigated theoretically. It is found that efficient injection occurs provided the two pulses are collinearly polarized, even if the injection pulse is much weaker than the pump pulse driving...

  • Electron-beam pumped pulsed IR semiconductor laser based on a quantum-size InGaAs/AlGaAs structure. Zverev, M.; Gamov, N.; Zhdanova, E.; Ladugin, M.; Marmalyuk, A.; Peregoudov, D.; Studionov, V. // Optics & Spectroscopy;Aug2011, Vol. 111 Issue 2, p182 

    The characteristics of the radiation of a 890-nm laser based on a quantum-size InGaAs/AlGaAs structure, pumped by a (15-26)-keV electron beam, have been studied. An output pulsed power up to 90 W with an efficiency of 3.5% is obtained from each laser end face at room temperature of the active...

  • Influence of nonlinear effects on destruction of active elements of electron-beam-pumped lasers Based on ZnSe-containing quantum-size structures. Zverev, M.; Val'dner, V.; Gamov, N.; Esin, R.; Gronin, S.; Zhdanova, E.; Ivanov, S.; Kop'ev, P.; Peregoudov, D.; Sedova, I.; Sorokin, S.; Studionov, V. // Optics & Spectroscopy;Aug2011, Vol. 111 Issue 2, p178 

    The fracture patterns of active elements of pulsed green lasers with transverse electron-beam pumping, based on ZnSe-containing quantum-size structures, have been investigated. The fracture in the form of thin (∼1 μm) and long (to 100-150 μm) filaments can be explained by the...

  • Compact microdisk cavity laser with type-II GaSb/GaAs quantum dots. Hsu, K. S.; Chiu, T. T.; Lin, Wei-Hsun; Chen, K. L.; Shih, M. H.; Lin, Shih-Yen; Chang, Yia-Chung // Applied Physics Letters;1/31/2011, Vol. 98 Issue 5, p051105 

    Microdisk lasers with active region made of type-II GaSb/GaAs quantum dots on the GaAs substrate have been demonstrated. A microdisk cavity with diameter of 3.9 μm was fabricated from a 225-nm-thick GaAs layer filled with GaSb quantum dots. Lasing at wavelengths near 1000 nm at 150 K was...

  • Smooth e-beam-deposited tin-doped indium oxide for III-nitride vertical-cavity surface-emitting laser intracavity contacts. Leonard, J. T.; Cohen, D. A.; Yonkee, B. P.; Farrell, R. M.; DenBaars, S. P.; Speck, J. S.; Nakamura, S. // Journal of Applied Physics;2015, Vol. 118 Issue 14, p145304-1 

    We carried out a series of simulations analyzing the dependence of mirror reflectance, threshold current density, and differential efficiency on the scattering loss caused by the roughness of tin-doped indium oxide (ITO) intracavity contacts for 405 nm flip-chip III-nitride vertical-cavity...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics