Intermediate-band photovoltaic solar cell based on ZnTe:O

Wieming Wang; Lin, Albert S.; Phillips, Jamie D.
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011103
Academic Journal
Oxygen doping in ZnTe is applied to a junction diode in the aim of utilizing the associated electron states 0.5 eV below the bandedge as an intermediate band for photovoltaic solar cells. The ZnTe:O diodes confirm extended spectral response below the bandedge relative to undoped ZnTe diodes, and demonstrate a 100% increase in short circuit current, 15% decrease in open circuit voltage, and overall 50% increase in power conversion efficiency. Subbandgap excitation at 650 and 1550 nm confirms the response via a two-photon process and illustrates the proposed energy conversion mechanism for an intermediate band solar cell.


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