TITLE

Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films

AUTHOR(S)
Jang, M. H.; Park, S. J.; Lim, D. H.; Cho, M.-H.; Do, K. H.; Ko, D.-H.; Sohn, H. C.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012102
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of Ge K edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO2 phase was not observed, while phase separation into Sb2O3 and Sb2Te3 occurred. The results indicate Ge–Te bonds with oxygen are related to structural stability.
ACCESSION #
43158500

 

Related Articles

  • Local structures surrounding Zr in nanostructurally stabilized cubic zirconia: Structural origin of phase stability. Soo, Y. L.; Chen, P. J.; Huang, S. H.; Shiu, T. J.; Tsai, T. Y.; Chow, Y. H.; Lin, Y. C.; Weng, S. C.; Chang, S. L.; Wang, G.; Cheung, C. L.; Sabirianov, R. F.; Mei, W. N.; Namavar, F.; Haider, H.; Garvin, K. L.; Lee, J. F.; Lee, H. Y.; Chu, P. P. // Journal of Applied Physics;Dec2008, Vol. 104 Issue 11, p113535 

    Local environment surrounding Zr atoms in the thin films of nanocrystalline zirconia (ZrO2) has been investigated by using the extended x-ray absorption fine structure (EXAFS) technique. These films prepared by the ion beam assisted deposition exhibit long-range structural order of cubic phase...

  • Lattice Defect of Interfacial Layer in Superhard TiN/Si3N4 Multilayer Films Studied by Fluorescence X-Ray Absorption Fine Structure. Pan, Zhiyun; Sun, Zhihu; Xie, Zhi; Xu, Junhua; Kojima, Isao; Wei, Shiqiang // AIP Conference Proceedings;2007, Vol. 882 Issue 1, p449 

    Fluorescence x-ray absorption fine structure (XAFS) is used to study the local structures of super-hard TiN/Si3N4 multilayer films deposited by reactive magnetron sputtering at temperatures of 20, 200, 500 and 800 °C. The results clearly reveal the presence of interfacial intermixing between...

  • Orientation of thin liquid crystal films on buffed polyimide alignment layers: A near-edge x-ray absorption fine structure investigation. Weiss, Klaus; Woll, Christof; Johannsmann, Diethelm // Journal of Chemical Physics;12/22/2000, Vol. 113 Issue 24, p11297 

    Evaluates the x-ray absorption fine structure performed on thin films of the liquid crystals n-octyl-cyanobiphenyl. Difference of liquid crystal from graphite; Evaporation of the structure onto the buffed PMDA-ODA polyimide alignment layers; Derivation of tensor nematic order from the...

  • Local structure around Mn atoms in cubic (Ga,Mn)N thin films probed by fluorescence extended x-ray absorption fine structure. Bo He; Xinyi Zhang; Shiqiang Wei; Hiroyuki Oyanagi; Novikov, Sergei V.; Edmonds, Kevin W.; Foxon, C. Thomas; Gui'en Zhou; Yunbo Jia // Applied Physics Letters;1/30/2006, Vol. 88 Issue 5, p051905 

    The local structures of Mn atoms incorporated in zinc-blende (Ga,Mn)N thin films have been investigated by fluorescence extended x-ray absorption fine structure analysis (EXAFS). The EXAFS results provide direct evidence for the substitution of the majority of Mn atoms in Ga sites of GaN at 2.5%...

  • Investigation of phase miscibility of CoCrPt thin films using anomalous x-ray scattering and extended x-ray absorption fine structure. Sun, C. J.; Chow, G. M.; Han, S.-W.; Wang, J. P.; Hwu, Y. K.; Je, J. H. // Applied Physics Letters;3/20/2006, Vol. 88 Issue 12, p122508 

    The phase miscibility of Co, Cr and Pt in oriented nanostructured CoCrPt magnetic thin films was investigated using anomalous x-ray scattering (AXS) from the (002) reflection and extended x-ray absorption fine structure (EXAFS) at Co K, Cr K and Pt LIII edges. The AXS measurements at Co K edge...

  • EXAFS investigations on PbMoO single crystals grown under different conditions. POSWAL, A; BHATTACHARYYA, D; JHA, S; SANGEETA; SABHARWAL, S // Bulletin of Materials Science;2012, Vol. 35 Issue 1, p103 

    Extended X-ray absorption fine structure (EXAFS) measurements on PbMoO $_{\boldsymbol{4}}$ (LMO) crystals have been performed at the recently-commissioned dispersive EXAFS beamline (BL-8) of INDUS-2 Synchrotron facility at Indore, India. The LMO samples were prepared under three different...

  • NEXAFS study on the local structures of DLC thin films formed by Ar cluster ion beam assisted deposition. Kanda, Kazuhiro; Kitagawa, Teruyuki; Shimizugawa, Yutaka; Tsubakino, Harushige; Yamada, Isao; Matsui, Shinji // AIP Conference Proceedings;2003, Vol. 680 Issue 1, p759 

    Near-edge X-ray absorption fine structure (NEXAFS) spectra were measured for the optimization of synthesis conditions on the production of diamond-like carbon (DLC) thin films by the Ar gas cluster ion beam (GCIB) assisted deposition of fullerene. The sp2 contents of DLC films were estimated...

  • Effect of different thickness crystalline SiC buffer layers on the ordering of MgB2 films probed by extended x-ray absorption fine structure. Putri, W. B. K.; Tran, D. H.; Lee, O. Y.; Kang, W. N.; Miyanaga, T.; Yang, D. S.; Kang, B. // Journal of Applied Physics;2014, Vol. 115 Issue 9, p093901-1 

    Extended X-ray absorption fine structure (EXAFS) spectroscopy is a powerful method to investigate the local structure of thin films. Here, we have studied EXAFS of MgB2 films grown on SiC buffer layers. Crystalline SiC buffer layers with different thickness of 70, 100, and 130 nm were deposited...

  • In-situ crystallization of GeTe\GaSb phase change memory stacked films. Velea, A.; Borca, C. N.; Socol, G.; Galca, A. C.; Grolimund, D.; Popescu, M.; van Bokhoven, J. A. // Journal of Applied Physics;2014, Vol. 116 Issue 23, p234306-1 

    Single and double layer phase change memory structures based on GeTe and GaSb thin films were deposited by pulsed laser deposition (PLD). Their crystallization behavior was studied using in-situ synchrotron techniques. Electrical resistance vs. temperature investigations, using the four points...

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics