Phase change behavior in oxygen-incorporated Ge2Sb2Te5 films

Jang, M. H.; Park, S. J.; Lim, D. H.; Cho, M.-H.; Do, K. H.; Ko, D.-H.; Sohn, H. C.
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012102
Academic Journal
Oxygen-incorporated Ge2Sb2Te5 (GST) films were deposited using ion beam sputtering deposition. Sheet resistance in films with 16.7% oxygen content decreased at a higher annealing temperature than that of undoped GST films, while resistance in films with an oxygen content of over 21.7% decreased dramatically at lower temperatures. X-ray diffraction patterns showed crystallization to face-centered cubic phase was suppressed. However, phase separation to a hexagonal structure was observed in films with an oxygen content of over 21.7%. Extended x-ray absorption fine structure data of Ge K edge showed Ge was bonded to O as well as Te. Moreover, a stoichiometric GeO2 phase was not observed, while phase separation into Sb2O3 and Sb2Te3 occurred. The results indicate Ge–Te bonds with oxygen are related to structural stability.


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