TITLE

Confined energy states in quantum dots detected by a resonant differential capacitance method

AUTHOR(S)
Engström, O.; Kaniewska, M.; Kaczmarczyk, M.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p013104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
A novel method is demonstrated for revealing the presence of confined energy states in quantum dots. The samples used are Schottky diodes with quantum dots inserted in a plane inside its depletion region. By measuring the voltage derivative of the differential diode capacitance and plotting the data as contour diagrams on a voltage versus temperature plane, the confined charge carrier states are visualized as peaks. To confirm this interpretation, experimental data are compared with theory based on statistics earlier used for understanding data from deep level transient spectroscopy on the same type of samples.
ACCESSION #
43158495

 

Related Articles

  • Deep level transient spectroscopy study of energy levels in InAs/GaAs self-assembled quantum dots. Kim, J. S.; Lee, Y.-I.; Ha, L.; Kim, E. K.; Kim, J. O.; Lee, S. J.; Noh, S. K. // AIP Conference Proceedings;1/4/2010, Vol. 1199 Issue 1, p295 

    The energy states in InAs/GaAs self-assembled QD system were measured and analyzed by using capacitance-voltage and deep level transient spectroscopy methods with varying the applied biases and the filling pulse widths. The activation energies of the QD signals were shifted from 0.07 to 0.60 eV...

  • Effect of swift heavy ion irradiation on deep levels in Au/n-Si (100) Schottky diode studied by deep level transient spectroscopy. Kumar, Sandeep; Katharria, Y. S.; Kumar, Sugam; Kanjilal, D. // Journal of Applied Physics;Dec2007, Vol. 102 Issue 11, p113709 

    In situ deep level transient spectroscopy has been applied to investigate the influence of 100 MeV Si7+ ion irradiation on the deep levels present in Au/n-Si (100) Schottky structure in a wide fluence range from 5×109 to 1×1012 ions cm-2. The swift heavy ion irradiation introduces a deep...

  • Neutron-irradiated Schottky diodes with self-assembled InAs quantum dots: Optical and electrical properties. Schramm, A.; Tukiainen, A.; Pessa, M.; Konetzni, C.; Heyn, Ch.; Hansen, W. // Journal of Applied Physics;May2009, Vol. 105 Issue 10, p104308 

    The effect of neutron irradiation on optical and electrical properties of self-assembled InAs/GaAs quantum dots (QDs) is studied for neutron doses up to [lowercase_phi_synonym]n=3*1014 cm-2. The QDs are embedded in n-type GaAs Schottky diodes grown by molecular beam epitaxy on GaAs(001). We...

  • Study of coupling effect in double-layer quantum dots by admittance spectroscopy. Fengying Yuan; Zuimin Jiang; Fang Lu // Applied Physics Letters;8/14/2006, Vol. 89 Issue 7, p072112 

    The influence of the coupling effect on quantum confinement energy levels and on the Coulomb charging effect in double-layer GeSi quantum dots (QDs) is investigated by admittance spectroscopy. The coupling effect depends on the thickness of the space layer between QD layers. The increasing...

  • Low-frequency noise spectroscopy in Au/n-GaAs Schottky diodes with InAs quantum dots. Tsormpatzoglou, A.; Hastas, N. A.; Tassis, D. H.; Dimitriadis, C. A.; Kamarinos, G.; Frigeri, P.; Franchi, S.; Gombia, E.; Mosca, R. // Applied Physics Letters;10/17/2005, Vol. 87 Issue 16, p163109 

    The temperature dependence of low-frequency noise in Au/n-GaAs Schottky diodes, with InAs quantum dots (QDs) embedded in the GaAs confining layers, is investigated in the temperature range of 77–298 K and at frequencies from 1 Hz to 5 kHz. Diodes prepared on samples with similar structure...

  • Hole Traps in ZnTe with CdTe Quantum Dots. Zielony, E.; Placzek-Popko, E.; Gumienny, Z.; Trzmiel, J.; Karczewski, G.; Guziewicz, M. // Acta Physica Polonica, A.;Nov2009, Vol. 116 Issue 5, p885 

    In this study the capacitance-voltage (C-V ) and deep level transient spectroscopy measurements have been performed on ZnTe (p-type)-Ti/Al Schottky diodes containing a layer of CdTe self-assembled quantum dots and on the reference diodes without dots for comparison. Both kinds of investigated...

  • Deep level transient spectroscopy of hole traps related to CdTe self-assembled quantum dots embedded in ZnTe matrix. Zielony, E.; Placzek-Popko, E.; Dyba, P.; Gumienny, Z.; Dobaczewski, L.; Karczewski, G. // AIP Conference Proceedings;12/22/2011, Vol. 1399 Issue 1, p373 

    The capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements have been performed on a Schottky structure containing self-assembled CdTe quantum dots (QDs) embedded in ZnTe (p-type) matrix. A characteristic step on the C-V curve due to charge accumulation on QD states...

  • Deep level transient spectroscopy of hole defects in bulk-grown p-GaAs using Schottky barrier diodes. Auret, F. D.; Nel, M. // Applied Physics Letters;1/13/1986, Vol. 48 Issue 2, p130 

    Schottky barrier diodes were used to detect and study hole defects in bulk-grown p-type GaAs by deep level transient spectroscopy. Several defects with concentrations of 1013–1016/cm3 were studied. It was found that two of these defects, with electronic levels at Ev +0.42 eV and Ev +0.58...

  • C-induced deep levels in crystalline Si. Endrös, A.; Krühler, W.; Koch, F. // Journal of Applied Physics;6/1/1987, Vol. 61 Issue 11, p5051 

    Presents information on a study which examined the deep traps in depletion regions of Schottky barrier junctions of silicon using deep level transient spectroscopy. Methodology of the study; Results and discussion; Conclusion.

Share

Read the Article

Courtesy of THE LIBRARY OF VIRGINIA

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics