TITLE

Crystal orientation of GaAs islands grown on SrTiO3 (001) by molecular beam epitaxy

AUTHOR(S)
Largeau, L.; Cheng, J.; Regreny, P.; Patriarche, G.; Benamrouche, A.; Robach, Y.; Gendry, M.; Hollinger, G.; Saint-Girons, G.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011907
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The growth of GaAs islands on (001)-oriented SrTiO3 (STO) substrates by molecular beam epitaxy is studied. A competition between (111)- and (001)-oriented islands takes place. It is shown that this competition is driven by the interface energy and the critical nucleation volume of the GaAs/STO system. Perspectives are proposed to control this competition in order to define reliable growth procedures for the monolithic integration of GaAs based heterostructures on crystalline STO/Si(001) templates.
ACCESSION #
43158475

 

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