TITLE

Charging effect and capacitance modulation of Ni-rich NiO thin film

AUTHOR(S)
Ang, R.; Chen, T. P.; Liu, Z.; Wong, J. I.; Yi, M. D.; Yang, M.; Cen, Z. H.; Zhu, S.; Zhu, W.; Goh, E. S. M.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
In this letter, Ni-rich NiO thin film is deposited on p-type Si substrate by dc magnetron sputtering to form a metal-insulator-semiconductor structure. The charge trapping in the Ni nanocrystals (nc-Ni) embedded in NiO matrix induces a flatband voltage shift and capacitance modulation, which could be used for memory applications. The charging of nc-Ni depends on the voltage polarity, as well as the charging time and magnitude of gate voltage. The capacitance modulation can be described by an equivalent circuit model.
ACCESSION #
43158474

 

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