TITLE

Electrical characterization of the soft breakdown failure mode in MgO layers

AUTHOR(S)
Miranda, E.; O'Connor, E.; Cherkaoui, K.; Monaghan, S.; Long, R.; O'Connell, D.; Hurley, P. K.; Hughes, G.; Casey, P.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012901
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. We also show that the SBD current-voltage (I-V) characteristics follow the power-law model I=aVb typical of this conduction mechanism but in a wider voltage window than the one reported in the past for SiO2. The relationship between the magnitude of the current and the normalized differential conductance was analyzed.
ACCESSION #
43158473

 

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