TITLE

Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate

AUTHOR(S)
Chia-Hua Chan; Chia-Hung Hou; Shao-Ze Tseng; Tsing-Jen Chen; Hung-Ta Chien; Fu-Li Hsiao; Chien-Chieh Lee; Yen-Ling Tsai; Chii-Chang Chen
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011110
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.
ACCESSION #
43158457

 

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