Transistorlike behavior in photoconductor based on dye-sensitized solar cell

Wang, X. Q.; Cai, C. B.; Wang, Y. F.; Zhou, W. Q.; Lu, Y. M.; Liu, Z. Y.; Hu, L. H.; Dai, S. Y.
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011112
Academic Journal
A photogated transistor is established based on the dye-sensitized solar cell using nanocrystalline TiO2 films. Voltage-current curves are characterized with three types of transport behaviors: linear increase, saturated plateau, and breakdownlike increase, which are actually of the typical performances for a phototransistor. Moreover, an asymmetric behavior is observed in the voltage-current loops, which is believed to be due to the difference in the effective photoconducting areas rather than the cross-section areas. The photovoltaic voltage between the common counter electrode and drain (VCE-D) is examined as well during the loop measurements, clarifying that the predominant dark process in source and the predominant photovoltaic process in drain are series connected, modifying the electric potential levels, and thus resulting in the characteristic phototransistor behaviors.


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