Spectroscopic ellipsometry study of GaAs1-xBix material grown on GaAs substrate by atmospheric pressure metal-organic vapor-phase epitaxy

Sedrine, Nebiha Ben; Moussa, Imed; Fitouri, Hedi; Rebey, Ahmed; El Jani, Belgacem; Chtourou, Radhouane
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011910
Academic Journal
The optical properties in terms of complex dielectric function of GaAs1-xBix alloys (0%≤x≤3.7%), grown by atmospheric pressure metal-organic vapor-phase epitaxy, are determined by using room temperature spectroscopic ellipsometry. The interband transition energies in the energy range of 1.4–5.4 eV are resolved using a line shape fitting on the numerically calculated dielectric function second derivatives. The bismuth effect on the critical point parameters is then determined. We have found that, as for GaAs1-xBix alloys E0 transition, the bismuth incorporation shifts the E1, E1+Δ1, E2, and E0′ transition energies but with a lower magnitude. We also observed a root-square-like increase of the E1 broadening parameter (Γ1) with respect to the bismuth composition.


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