Magnetotransport properties of p-type carbon-doped ZnO thin films

Herng, T. S.; Lau, S. P.; Wang, L.; Zhao, B. C.; Yu, S. F.; Tanemura, M.; Akaike, A.; Teng, K. S.
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012505
Academic Journal
Carbon-doped ZnO (ZnO:C) thin films exhibiting Curie temperature above room temperature were fabricated using ion beam technique. The magnetic moment of the ZnO:C films was found to be around 1.35 μB per carbon atom. The ZnO:C films showed p-type conduction with a hole concentration of ∼5×1017 cm-3. In addition, the anomalous Hall effect and negative magnetoresistance can be detected in the ZnO:C films. The magnetotransport properties of the ZnO:C suggested that the films possessed charge carrier spin polarization.


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