Direct gap photoluminescence of n-type tensile-strained Ge-on-Si

Xiaochen Sun; Jifeng Liu; Kimerling, Lionel C.; Michel, Jurgen
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011911
Academic Journal
Room temperature direct gap photoluminescence (PL) was observed from n-type tensile-strained epitaxial Ge-on-Si. The PL intensity increases with n-type doping due to a higher electron population in the direct Γ valley as a result of increased Fermi level. The direct gap emission also increases with temperature due to thermal excitation of electrons into the direct Γ valley, exhibiting robustness to heating effects. These unique properties of direct gap emission in an indirect gap material agree with our theoretical model and make Ge a promising light emitting material in 1550 nm communication band.


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