TITLE

Enhanced transmission from a single subwavelength slit aperture surrounded by grooves on a standard detector

AUTHOR(S)
Dunbar, L. A.; Guillaumée, M.; de León-Pérez, F.; Santschi, C.; Grenet, E.; Eckert, R.; López-Tejeira, F.; García-Vidal, F. J.; Martín-Moreno, L.; Stanley, R. P.
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011113
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
An enhanced transmission is detected through a single slit of subwavelength width surrounded by grooves in a gold layer that is added as a postprocess to a standard complementary metal oxide semiconductor (CMOS) fabricated detector. The enhanced transmission results from constructive interference of surface waves, which interact with the incident light. The measured enhanced transmission shows strong qualitative agreement with that predicted by the modal expansion method. With the decreasing dimensions available in standard CMOS process, such nanostructures in metals could be used to replace current optical systems or to improve performance by increasing the signal to noise ratio and/or allowing polarization selection.
ACCESSION #
43158432

 

Related Articles

  • RTS Noise and Dark Current White Defects Reduction Using Selective Averaging Based on a Multi-Aperture System. Bo Zhang; Keiichiro Kagawa; Taishi Takasawa; Min Woong Seo; Keita Yasutomi; Shoji Kawahito // Sensors (14248220);Jan2014, Vol. 14 Issue 1, p1528 

    In extremely low-light conditions, random telegraph signal (RTS) noise and dark current white defects become visible. In this paper, a multi-aperture imaging system and selective averaging method which removes the RTS noise and the dark current white defects by minimizing the synthetic sensor...

  • A CMOS-Compatible, Low-Noise ISFET Based on High Efficiency Ion-Modulated Lateral-Bipolar Conduction. Sheng-Ren Chang; Hsin Chen // Sensors (14248220);2009, Vol. 9 Issue 10, p8336 

    Ion-sensitive, field-effect transistors (ISFET) have been useful biosensors in many applications. However, the signal-to-noise ratio of the ISFET is limited by its intrinsic, low-frequency noise. This paper presents an ISFET capable of utilizing lateral-bipolar conduction to reduce low-frequency...

  • Multi-standard S Σ Δ Modulator for GSM/WCDMA Applications. Sharma, Durshee; Paily, Roy // IETE Journal of Research (Medknow Publications & Media Pvt. Ltd.;Jul/Aug2012, Vol. 58 Issue 4, p292 

    This paper reports the design of multi-standard sigma delta modulator with low power consideration. It uses the cascaded methodology for modulator design to reduce power dissipation and single feedback system has been used to provide higher stability. The concept of oversampling and noise...

  • A third-order complementary metal-oxide-semiconductor sigma-delta modulator operating between 4.2 K and 300 K. Okcan, Burak; Gielen, Georges; Van Hoof, Chris // Review of Scientific Instruments;Feb2012, Vol. 83 Issue 2, p024708 

    This paper presents a third-order switched-capacitor sigma-delta modulator implemented in a standard 0.35-μm CMOS process. It operates from 300 K down to 4.2 K, achieving 70.8 dB signal-to-noise-plus-distortion ratio (SNDR) in a signal bandwidth of 5 kHz with a sampling frequency of 500 kHz...

  • Design of A Second-Order Sigma-Delta Modulator. Min Guo; Honghui Deng; Bowen Ding; Yongsheng Yin // Applied Mechanics & Materials;2014, Issue 644-650, p3797 

    A second-order single bit Sigma - Delta modulator which can be applied to pressure sensor is designed in this paper.The modulator uses switched-capacitor circuit,and the operational amplifier adopts a differential folded-cascode structure with PMOS tube as input. Optimizes the coefficients at...

  • Signal-to-noise ratio in dual-gated silicon nanoribbon field-effect sensors. Tarasov, A.; Fu, W.; Knopfmacher, O.; Brunner, J.; Calame, M.; Schönenberger, C. // Applied Physics Letters;1/3/2011, Vol. 98 Issue 1, p012114 

    Recent studies on nanoscale field-effect sensors reveal the crucial importance of the low-frequency noise for determining the ultimate detection limit. In this letter, the 1/f-type noise of Si nanoribbon field-effect sensors is investigated. We demonstrate that the signal-to-noise ratio can be...

  • The differential Howland current source with high signal to noise ratio for bioimpedance measurement system. Jinzhen Liu; Xiaoyan Qiao; Mengjun Wang; Weibo Zhang; Gang Li; Ling Lin // Review of Scientific Instruments;2014, Vol. 85 Issue 5, p1 

    The stability and signal to noise ratio (SNR) of the current source circuit are the important factors contributing to enhance the accuracy and sensitivity in bioimpedance measurement system. In this paper we propose a new differential Howland topology current source and evaluate its output...

  • A Hybrid Audio ΔΣ Modulator with dB-Linear Gain Control Function. Yi-Gyeong Kim; Min-Hyung Cho; Bong Chan Kim; Jong-Kee Kwon // ETRI Journal;Dec2011, Vol. 33 Issue 6, p897 

    A hybrid ΔΣ modulator for audio applications is presented in this paper. The pulse generator for digital-to-analog converter alleviates the requirement of the external clock jitter and calibrates the coefficient variation due to a process shift and temperature changes. The input resistor...

  • A 640 MHz, 15 mW CMOS Switched-Capacitor Sigma-Delta Modulator ADC with 14 Bits of Resolution Using Double Sampling Technique. Torkzadeh, Pooya; Alarodi, Mojtaba // International Review of Electrical Engineering;Mar/Apr2009, Vol. 4 Issue 2, p312 

    In this paper, a novel architecture of sigma-delta modulator for maximum achievable signal-to-noise ratio, analytical aspects, noise transfer function optimization and its implementation by switched-capacitor circuits using double sampling technique will be presented. Integrator non-idealities...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics