TITLE

Solution-processed InGaZnO-based thin film transistors for printed electronics applications

AUTHOR(S)
Jun Hyung Lim; Jong Hyun Shim; Jun Hyuk Choi; Jinho Joo; Kyung Park; Haseok Jeon; Mi Ran Moon; Donggeun Jung; Hyoungsub Kim; Hoo-Jeong Lee
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012108
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
This letter reports the utility of using the sol-gel process for exploring the library of multicomponent ZnO-based oxides as an active layer of thin film transistors. We chose InGaZnO as a starting material and modulated the Ga content to examine the potential of this material. Increasing the Ga ratio from 0.1 to 1 brought about a dynamic shift in the electrical behavior from conductor to semiconductor. This exploratory work critically helped us fabricate a device with robust device performance (a mobility of 1∼2 cm2 V-1 s-1 for the 400 °C-sintered samples and 0.2 cm2 V-1 s-1 for the 300 °C-sintered samples).
ACCESSION #
43158429

 

Related Articles

  • Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe. Mitsui, Minoru; Arimoto, Keisuke; Yamanaka, Junji; Nakagawa, Kiyokazu; Sawano, Kentarou; Shiraki, Yasuhiro // Applied Physics Letters;11/6/2006, Vol. 89 Issue 19, p192102 

    The transport properties of thin-film transistors (TFTs) fabricated on polycrystalline-SiGe films, which were formed by solid-phase crystallization of amorphous-Si1-xGex (x=0, 0.3, 0.5, and 0.7) films, were studied. The mobility of TFTs increases as the Ge concentration increases from 0% to 30%...

  • Mechanical force sensors using organic thin-film transistors. Darlinski, Grzegorz; Böttger, Ulrich; Waser, Rainer; Klauk, Hagen; Halik, Marcus; Zschieschang, Ute; x00FC;nter#Schmid, G&; Dehm, Christine // Journal of Applied Physics;5/1/2005, Vol. 97 Issue 9, p093708 

    The pressure dependence of pentacene (C22H14) transistors with solution-processed polyvinylphenol gate dielectric on glass substrates is investigated by applying uniaxial mechanical pressure with a needle. We found that organic thin-film transistors are sensitive to applied pressure inherently....

  • Threshold voltage shift in organic field effect transistors by dipole monolayers on the gate insulator. Pernstich, K.P.; Haas, S.; Oberhoff, D.; Goldmann, C.; Gundlach, D.J.; Batlogg, B.; Rashid, A.N.; Schitter, G. // Journal of Applied Physics;12/1/2004, Vol. 96 Issue 11, p6431 

    We demonstrate controllable shift of the threshold voltage and the turn-on voltage in pentacene thin film transistors and rubrene single crystal field effect transistors (FET) by the use of nine organosilanes with different functional groups. Prior to depositing the organic semiconductors, the...

  • Drain current model for thin-film transistors with interface trap states. Tsuji, Hiroshi; Kamakura, Yoshinari; Taniguchi, Kenji // Journal of Applied Physics;Feb2010, Vol. 107 Issue 3, p034502 

    A surface-potential-based drain current model for thin-film transistors (TFTs) is presented. In this model, the influence of traps located at the gate-oxide/silicon interface is accounted for to reproduce the gradual increase in the subthreshold current. The model uses a single equation that...

  • Organic thin-film transistors having inorganic/organic double gate insulators. Wang, Jun; Xuanjun Yan; Yanxia Xu; Jian Zhang; Donghang Yan // Applied Physics Letters;11/29/2004, Vol. 85 Issue 22, p5424 

    Bottom-contact organic thin-film transistors (BC OTFTs) based on inorganic/organic double gate insulators were demonstrated. The double gate insulators consisted of tantalum pentoxide (Ta2O5) with high dielectric constant (κ) as the first gate insulator and octadecyltrichlorosilane (OTS) with...

  • Choosing the perfect TFT display: part two. Dautel, Rob // EDN;2/19/2004, Vol. 49 Issue 4, p61 

    Discusses the types of thin-film transistor (TFT) interfaces and the electronics that drive and control them. Factors to be considered in choosing TFT displays; Standard interfaces that TFT manufacturers have adopted in connecting TFT controllers; Options in driving TFT's; Discussion of some...

  • High-field-effect-mobility pentacene thin-film transistors with polymethylmetacrylate buffer layer. De Angelis, F.; Cipolloni, S.; Mariucci, L.; Fortunato, G. // Applied Physics Letters;5/16/2005, Vol. 86 Issue 20, p203505 

    A thin film of polymethylmetacrylate (PMMA) acting as a buffer layer has been employed in order to fabricate high-quality pentacene thin-film transistors (TFTs), both in bottom contact and top contact configuration. A PMMA buffer layer allows to reduce the interaction between a π-conjugated...

  • Gate oxide induced switch-on undershoot current observed in thin-film transistors. Yan, Feng; Migliorato, Piero; Hong, Yi; Rana, V.; Ishihara, R.; Hiroshima, Y.; Abe, D.; Inoue, S.; Shimoda, T. // Applied Physics Letters;6/20/2005, Vol. 86 Issue 25, p253504 

    The transient drain current of the single-grain silicon thin-film transistor with gate oxide deposited by electron cyclotron resonance plasma-enhanced chemical vapor deposition has been measured by applying a square signal on the gate and a constant low voltage between source and drain....

  • Stability of continuous-wave laser-crystallized epilike silicon transistors. Lin, Yu-Ting; Chen, Chih; Shieh, Jia-Min; Pan, Ci-Ling // Applied Physics Letters;2/12/2007, Vol. 90 Issue 7, p073508 

    Stability of high-hole-mobility thin-film transistors (TFTs) on single-grainlike silicon channels formed by continuous-wave laser crystallization during hot-carrier stressing (HCS) was studied. As channel layers become thicker, laser-mediated channel crystallinity increases, increasing channel...

Share

Read the Article

Courtesy of VIRGINIA BEACH PUBLIC LIBRARY AND SYSTEM

Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics