Solution-processed InGaZnO-based thin film transistors for printed electronics applications

Jun Hyung Lim; Jong Hyun Shim; Jun Hyuk Choi; Jinho Joo; Kyung Park; Haseok Jeon; Mi Ran Moon; Donggeun Jung; Hyoungsub Kim; Hoo-Jeong Lee
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p012108
Academic Journal
This letter reports the utility of using the sol-gel process for exploring the library of multicomponent ZnO-based oxides as an active layer of thin film transistors. We chose InGaZnO as a starting material and modulated the Ga content to examine the potential of this material. Increasing the Ga ratio from 0.1 to 1 brought about a dynamic shift in the electrical behavior from conductor to semiconductor. This exploratory work critically helped us fabricate a device with robust device performance (a mobility of 1∼2 cm2 V-1 s-1 for the 400 °C-sintered samples and 0.2 cm2 V-1 s-1 for the 300 °C-sintered samples).


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