TITLE

Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers

AUTHOR(S)
Yen-Kuang Kuo; Jih-Yuan Chang; Miao-Chan Tsai; Sheng-Horng Yen
PUB. DATE
July 2009
SOURCE
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p011116
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The advantages of blue InGaN light-emitting diodes (LEDs) with InGaN barriers are studied. The L-I curves, carrier concentrations in the quantum wells, energy band diagrams, and internal quantum efficiency are investigated. The simulation results show that the InGaN/InGaN LED has better performance over its conventional InGaN/GaN counterpart due to the enhancement of electron confinement, the reduced polarization effect between the barrier and well, and the lower potential barrier height for the holes to transport in the active region. The simulation results also suggest that the efficiency droop is markedly improved when the traditional GaN barriers are replaced by InGaN barriers.
ACCESSION #
43158424

 

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