Evolution of photoluminescence properties of Si1-xGex nanocrystals synthesized by laser-induced pyrolysis

Ma, L. B.; Schmidt, T.; Guillois, O.; Huisken, F.
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p013115
Academic Journal
Silicon nanocrystals (NCs) doped with germanium were synthesized by CO2 laser-induced pyrolysis. Photoluminescence (PL) spectra were measured for a Si0.92Ge0.08 NC sample as a function of time, starting one day after synthesis. The position of the PL peak and the following blueshift during aging are consistent with radiative recombination of quantum-confined excitons. At the same time, the evolution of the excited state lifetime was found to saturate after approximately 10 days. In accordance with theoretical calculations, the terminal radiative decay rate was found to be two times faster than for pure Si NCs at the same emission energy.


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