Ultraviolet electroluminescence from ZnO/NiO-based heterojunction light-emitting diodes

Hao Long; Guojia Fang; Huihui Huang; Xiaoming Mo; Wei Xia; Binzhong Dong; Xianquan Meng; Xingzhong Zhao
July 2009
Applied Physics Letters;7/6/2009, Vol. 95 Issue 1, p013509
Academic Journal
Ultraviolet light-emitting diodes based on ZnO/NiO heterojunctions were fabricated on commercially available n+-GaN/sapphire substrates using a radio frequency magnetron sputtering system. Near band edge emission of ZnO peaking at ∼370 nm with a full-width at half maximum of ∼7 nm was achieved at room temperature when the devices were under sufficient forward bias. With the help of an electron blocking i-Mg1-xZnxO(0


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