Optical switching in a resonant tunneling structure

England, P.; Golub, J.E.; Florez, L.T.; Harbison, J.P.
March 1991
Applied Physics Letters;3/4/1991, Vol. 58 Issue 9, p887
Academic Journal
Describes the interaction of light pulses with a gallium arsenide/aluminum arsenide resonant tunneling structure. Demonstration that light with an average power of less than 10 microwatts can induce switching; Change in the optical absorption; Potential applications for the resonant tunneling structure.


Related Articles

  • Femtosecond pulse evolution in GaAs crystal. Kumar, J.; Sen, Pratima // Journal of Applied Physics;2/1/2000, Vol. 87 Issue 3, p1049 

    Presents information on a study which investigated the evolution of an ultrashort pulse having frequency spectrum above the band edge in a sample of gallium arsenide crystal. Pulse evolution equation; Model of the semiconductor medium; Results and discussion; Conclusions.

  • Distribution of Electrons between Valleys and Band-Gap Narrowing at Picosecond Superluminescence in GaAs. Ageeva, N. N.; Bronevoı, I. L.; Krivonosov, A. N. // Semiconductors;Jan2001, Vol. 35 Issue 1, p67 

    Band-gap narrowing due to photogeneration of dense hot electron-hole plasma in GaAs was studied. Plasma was generated by picosecond light pulses, and picosecond superluminescence was observed. In this case, the total concentration of photogenerated electron-hole pairs was experimentally proved...

  • Electronic structure and dynamics of thin Ge/GaAs(110) heterostructures. Haight, R.; Silberman, J. A. // Applied Physics Letters;10/8/1990, Vol. 57 Issue 15, p1548 

    Using angle-resolved picosecond laser photoemission we have investigated both occupied and transiently excited empty states at the surface of Ge grown epitaxially on GaAs(110). We observe a normally unoccupied, Ge layer derived state whose separation from the valence-band maximum of the system...

  • Generation of ultrashort electrical pulses with variable pulse widths. Keil, U.D.; Gerritsen, H.J. // Applied Physics Letters;3/27/1995, Vol. 66 Issue 13, p1629 

    Generates ultrashort electrical pulses with variable pulse widths using coplanar strip lines and waveguides on semi-insulating GaAs substrate. Use of two optical pump beams; Presentation of a method for the generation of subpisecond electrical pulses; Advantages of the method.

  • Ultrashort pulse ultraviolet laser treatment of n(100) GaAs: Microstructural modifications and passivation effects. Railkar, T. A.; Malshe, A. P.; Brown, W. D.; Hullavarad, Shiva S.; Bhoraskar, S. V. // Journal of Applied Physics;5/1/2001, Vol. 89 Issue 9, p4766 

    Gallium arsenide (GaAs) is one of the most important materials among the III-V family, especially in view of its applicability to optoelectronic devices. However, it is known that GaAs, unlike silicon (Si), does not possess a stable native oxide that can passivate and protect the surface. This...

  • Instantaneous optical modulation in bulk GaAs semiconductor microcavities. Sanchez, S.; De Matos, C.; Pugnet, M. // Applied Physics Letters;6/11/2001, Vol. 78 Issue 24, p3779 

    Picosecond pump-probe experiments at room temperature on a bulk GaAs microcavity are presented. The microcavity device is designed to adjust the cavity mode energy 15 meV below the band gap energy of the intracavity bulk GaAs material. For low pump-energy densities (∼μJ/cm2), ultrafast...

  • Three color coherent generation and control of current in low-temperature-grown GaAs. Fraser, J.M.; Hache, A.; Shkrebtii, A.I.; Sipe, J.E.; van Driel, H.M. // Applied Physics Letters;4/5/1999, Vol. 74 Issue 14, p2014 

    Demonstrates coherent generation and control of electrical currents in low-temperature-grown gallium arsenide (GaAs) at 300 K using three phase-related, 150 femtosecond pulses derived from a parametric process. Interference between single photon and nondegenerate two photon absorption...

  • Low-loss quantum-dot-based saturable absorber for efficient femtosecond pulse generation. Lagatsky, A. A.; Bain, F. M.; Brown, C. T. A.; Sibbett, W.; Livshits, D. A.; Erbert, G.; Rafailov, E. U. // Applied Physics Letters;12/3/2007, Vol. 91 Issue 23, p231111 

    We report the efficient generation of femtosecond pulses from a diode-pumped solid-state laser that has been passively mode locked using a quantum-dot-based saturable absorber. Average output powers up to 1.15 W and transform-limited pulses as short as 114 fs were obtained around 1040 nm with a...

  • Non-thermal excitation and control of magnetization in Fe/GaAs film by ultrafast laser pulses. Gong, Y.; Kutayiah, A. R; Zhang, X. H.; Zhao, J. H.; Ren, Y. H. // Journal of Applied Physics;Apr2012, Vol. 111 Issue 7, p07D505 

    We present our recent study of non-thermal excitation and coherent control of spin reorientation in 10-nm epitaxially grown Fe thin films by low-energy femtosecond laser pulses. The magnetization dynamics and hysteresis curves were recorded by pump-probe differential magnetic Kerr (DMK)...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics