Dynamics of polybutadienes with different microstructures. 2. Dielectric response and comparisons

Zorn, Reiner; Mopsik, Frederick I.; McKenna, Gregory B.; Willner, Lutz; Richter, Dieter
September 1997
Journal of Chemical Physics;9/1/1997, Vol. 107 Issue 9, p3645
Academic Journal
Investigates a series of polubutadienes with varying content using time-domain dielectric spectroscopy. Dielectric measurements; Analysis of the data in frequency space; Time-temperature superposition.


Related Articles

  • Polybutadiene.  // Chemical Market Reporter;04/07/97, Vol. 251 Issue 14, p37 

    Provides information about the chemical polybutadiene. Companies producing the chemical; Demand; Growth; Price; Uses; Strength and weakness; Outlook.

  • Effective processability measurements of acrylonitrile butadiene rubber. Cousins, Wayne; Dick, John S. // Rubber World;Jan98, Vol. 217 Issue 4, p28 

    Presents alternative methods for effective processability measurements of acrylonitrile butadiene rubber. RPA 2000 rubber process analyzer; MV2000 Mooney viscometer with stress relaxation; RPA 2000 torque responses to a given sinusoidal applied strain; Mooney stress relaxation results on...

  • Pressure dependence of the Boson peak in poly(butadiene). Frick, B.; Alba-Simionesco, C. // Applied Physics A: Materials Science & Processing;Dec2002 Supplement, Vol. 74 Issue 6, ps549 

    Variation of pressure and temperature in inelastic neutron scattering experiments allows us to separate density and thermal energy contributions. We summarise briefly the influence of pressure and temperature on the dynamic scattering law of the polymer glass former poly(butadiene) far below the...

  • Phase behavior of binary polybutadiene copolymer mixtures as an example of weakly interacting polymers. Schwahn, D.; Willner, L. // Applied Physics A: Materials Science & Processing;Dec2002 Supplement, Vol. 74 Issue 6, ps358 

    Binary blends of statistical polybutadiene copolymers of different vinyl content and molar volume were explored by small-angle neutron scattering. These samples represent the most simple class of statistical copolymer mixtures. In spite of this simplicity, changes in vinyl content, molar volume,...

  • Limits on quality factors of localized defect modes in photonic crystals due to dielectric loss. Ueta, Tsuyoshi; Ohtaka, Kazuo // Journal of Applied Physics;12/1/1998, Vol. 84 Issue 11, p6299 

    Presents information on a study on the quality factors of defect modes localized at line defects introduced to a two-dimensional photonic crystal composed of a square array of circular dielectric rods. Discussion on the high quality factor of the localized defect modes; Methodology used in the...

  • MRS, IEDM eye high-K and ferroelectrics. K.D. // Solid State Technology;Feb96, Vol. 39 Issue 2, p40 

    Reports on the research on dielectric constant materials and the processing issues they raise. Interest of the Materials Research Society and the IEEE Electron Device Meeting on dielectrics; Dielectrics examined by researchers at Hitachi; Investigation of ferroelectric materials; Difficulty...

  • Erratum: “Modeling and simulation of tunneling through ultra-thin gate dielectrics” [J. Appl. Phys. 81, 7900 (1997)]. Schenk, A. // Journal of Applied Physics;5/1/2007, Vol. 101 Issue 9, p099901 

    This article provides a correction to the article "Modeling and simulation of tunneling through ultra-thin gate dielectrics" featured in a previous issue.

  • Addendum: Optical-field-induced current in dielectrics. Schiffrin, Agustin; Paasch-Colberg, Tim; Karpowicz, Nicholas; Apalkov, Vadym; Gerster, Daniel; Mühlbrandt, Sascha; Korbman, Michael; Reichert, Joachim; Schultze, Martin; Holzner, Simon; Barth, Johannes V.; Kienberger, Reinhard; Ernstorfer, Ralph; Yakovlev, Vladislav S.; Stockman, Mark I.; Krausz, Ferenc // Nature;3/20/2014, Vol. 507 Issue 7492, p386 

    A correction to the article "Optical-field-induced current in dielectrics" that was published in the 2013 issue is presented.

  • Suppressed crystallization of Hf-based gate dielectrics by controlled addition of Al[sub 2]O[sub 3] using atomic layer deposition. Ho, M.-Y.; Gong, H.; Wilk, G. D.; Busch, B. W.; Green, M. L.; Lin, W. H.; See, A.; Lahiri, S. K.; Loomans, M. E.; Räisänen, Petri I.; Gustafsson, T. // Applied Physics Letters;11/25/2002, Vol. 81 Issue 22, p4218 

    We demonstrate significantly improved thermal stability of the amorphous phase for hafnium-based gate dielectrics through the controlled addition of A1[SUB2]O[SUB3]. The (HfO[SUB2])[SUBx](A1[SUB2]O[SUB3])[SUB1-x] films, deposited using atomic layer deposition, exhibit excellent control over a...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics