SiO[sub 2]/6H-SiC(0001) 3x3 initial interface formation by Si overlayer oxidation

Amy, F.; Soukiassian, P.
November 1999
Applied Physics Letters;11/22/1999, Vol. 75 Issue 21, p3360
Academic Journal
Studies the initial oxidation and SiO[sub 2]/6H-SiC interface formation by core level photoemission spectroscopy using synchrotron radiation. Indication by the results that oxidation of the 6H-SiC(0001)3x3 surface leads to SiO[sub 2] formation at low temperatures.


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