Phonons in a strained hexagonal GaN--AIN superlattice

Gleize, J.; Demangeot, F.; Frandon, J.; Renucci, M.A.; Widmann, F.; Daudin, B.
February 1999
Applied Physics Letters;2/1/1999, Vol. 74 Issue 5, p703
Academic Journal
Studies the vibration modes of gallium nitride-AlN superlattice grown by molecular beam epitaxy on a sapphire substrate and an AlN buffer layer by micro-Raman spectroscopy. Frequency shift of phonons; Average strain value in GaN layers; Strain relaxation percentage of GaN layers lying close to the interface with the buffer layer.


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