TITLE

200 mW type I GaSb-based laser diodes operating at 3 μm: Role of waveguide width

AUTHOR(S)
Hosoda, Takashi; Kipshidze, Gela; Shterengas, Leon; Suchalkin, Sergey; Belenky, Gregory
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p261104
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.
ACCESSION #
42961971

 

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