200 mW type I GaSb-based laser diodes operating at 3 μm: Role of waveguide width

Hosoda, Takashi; Kipshidze, Gela; Shterengas, Leon; Suchalkin, Sergey; Belenky, Gregory
June 2009
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p261104
Academic Journal
Laser diodes based on AlInGaAsSb/InGaAsSb heterostructures with different waveguide widths were designed and fabricated. The decrease in the waveguide width from 1470 to 470 nm led to the improvement of the device performance. Lasers with 470 nm quinternary waveguides demonstrated 200 mW continuous wave output power at room temperature.


Related Articles

  • Integration of nonlinear optical polymer waveguides with InGaAs p-i-n photodiodes. Cites, Jeffrey S.; Ashley, Paul R. // Applied Physics Letters;3/11/1996, Vol. 68 Issue 11, p1452 

    Details the hybrid integration of nonlinear optical polymer waveguides with indium-gallium-arsenide p-i-n diodes. Advantages of NLO polymers for use in passive and active waveguide devices; Demonstration of flip-chip bonding; Description of monolithic overcoating.

  • Electro-optic modulation in slotted resonant photonic crystal heterostructures. Wülbern, Jan Hendrik; Hampe, Jan; Petrov, Alexander; Eich, Manfred; Luo, Jingdong; Jen, Alex K.-Y.; Di Falco, Andrea; Krauss, Thomas F.; Bruns, Jürgen // Applied Physics Letters;6/15/2009, Vol. 94 Issue 24, p241107 

    Two dimensional photonic crystal waveguides in high index materials enable integrated optical devices with an extremely small geometrical footprint on the scale of micrometers. Slotted waveguides are based on the guiding of light in low refractive index materials and a field enhancement in this...

  • Large-core single-mode channel waveguide based on geometrically shaped leaky cladding. Kumar, A.; Rastogi, V.; Chiang, K. S. // Applied Physics B: Lasers & Optics;Mar2008, Vol. 90 Issue 3/4, p507 

    We propose a leaky channel waveguide structure for large-mode-area single-mode operation. The proposed structure is characterized by a uniform rectangular core and a specially designed cladding, through which all the confined modes are leaky. Single-mode operation is ensured by choosing the...

  • Suppression of pointing instability in quantum cascade lasers by transverse mode control. Bouzi, Pierre M.; Liu, Peter Q.; Aung, Nyan; Wang, Xiaojun; Fan, Jen-Yu; Troccoli, Mariano; Gmachl, Claire F. // Applied Physics Letters;3/25/2013, Vol. 102 Issue 12, p122105 

    We report on a technique that serves to eliminate pointing instability in Quantum Cascade lasers by suppressing the propagation of higher order transverse modes within the laser cavity. This process, achieved via a short and lossy lateral constriction in the waveguide, only allows the...

  • Low-loss nonselectively oxidized AlxGa1-xAs heterostructure waveguides. Lou, Y.; Hall, D. C. // Applied Physics Letters;12/29/2008, Vol. 93 Issue 26, p261111 

    The use of nonselective AlGaAs oxidation (i.e., via the use of controlled, dilute O2 addition during wet thermal oxidation) enables a significant propagation loss reduction in fully oxidized Al0.3Ga0.7As/Al0.85Ga0.15As planar oxide single heterostructure waveguides. Prism coupling measurements...

  • In situ resistance measurement of the p-type contact in InP–InGaAsP coolerless ridge waveguide lasers. Kuntze, S. B.; Sargent, E. H.; White, J. K.; Hinzer, K.; Dixon-Warren, St. J.; Ban, D. // Applied Physics Letters;2/21/2005, Vol. 86 Issue 8, p081111 

    Scanning voltage microscopy (SVM) is employed to measure the voltage division—and resulting contact resistance and power loss—at the p-In0.53Ga0.47As–p-InP heterojunction in a working InP–InGaAsP laser diode. This heterojunction is observed to dissipate ∼35% of...

  • Direct generation of 20 W peak power picosecond optical pulses from an external-cavity mode-locked GaInN laser diode incorporating a flared waveguide. Oki, Tomoyuki; Koda, Rintaro; Kono, Shunsuke; Miyajima, Takao; Watanabe, Hideki; Kuramoto, Masaru; Ikeda, Masao; Yokoyama, Hiroyuki // Applied Physics Letters;9/12/2011, Vol. 99 Issue 11, p111105 

    We directly generated 1.6-ps optical pulses with a peak power of 20 W at a repetition of 1 GHz using a blue-violet GaInN mode-locked laser diode incorporating a flared waveguide operating in single transverse mode. The flared waveguide enabled optical pulses to be generated with peak powers of...

  • Time-resolved thermal characterization of semiconductor lasers. Lanco, L.; Ducci, S.; Likforman, J.-P.; Filloux, P.; Marcadet, X.; Calligaro, M.; Leo, G.; Berger, V. // Applied Physics Letters;1/8/2007, Vol. 90 Issue 2, p021105 

    The authors propose and demonstrate a simple nondestructive technique that allows characterizing precisely the thermal properties of semiconductor lasers. The method consists of performing transmission measurements with a probe beam end fire coupled into one of the waveguide facets. Fabry-Perot...

  • Far-infrared and terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructures. Zhang, W.-D.; Woolard, D. L. // Applied Physics Letters;5/16/2011, Vol. 98 Issue 20, p203505 

    A far-infrared lasing device based upon conduction-band to heavy-hole level interband transitions within a double-barrier broken-gap structure is presented. The upper conduction-band level is populated by resonant tunneling electron injection, and the lower heavy-hole state is depopulated by...


Read the Article


Sorry, but this item is not currently available from your library.

Try another library?
Sign out of this library

Other Topics