TITLE

Light polarization control in strain-engineered GaAsN/GaAsN:H heterostructures

AUTHOR(S)
Trotta, R.; Polimeni, A.; Capizzi, M.; Martelli, F.; Rubini, S.; Francardi, M.; Gerardino, A.; Mariucci, L.
PUB. DATE
June 2009
SOURCE
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p261905
SOURCE TYPE
Academic Journal
DOC. TYPE
Article
ABSTRACT
The expansion of the GaAsN lattice following hydrogen incorporation is spatially patterned so as to generate an anisotropic stress in the sample growth plane. The resulting in-plane symmetry breaking determines an in-plane polarization dependence of the light emitted along the crystal growth direction in agreement with optical selection rules and strain field calculations.
ACCESSION #
42961962

 

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