Change of the trap energy levels of the atomic layer deposited HfLaOx films with different La concentration

Chee-Hong An; Myung Soo Lee; Ju-Yun Choi; Hyoungsub Kim
June 2009
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p262901
Academic Journal
Ultrathin HfO2 and HfLaOx films with La/(Hf+La) ratios of 42%, 57%, and 64% were synthesized with an atomic layer deposition process. By measuring the leakage current at different temperatures, the conduction mechanism of HfO2 and HfLaOx films was shown to follow the Poole–Frenkel emission model under a gate injection condition. Based on the temperature and field-dependence measurements, the intrinsic trap energy levels were found to be 1.42, 1.34, 1.03, and 0.98 eV for the HfLaOx samples with La/(Hf+La) ratios of 0%, 42%, 57%, and 64%, respectively, showing a decreasing behavior as the La content increased.


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