Enhancement of field emission of the ZnO film by the reduced work function and the increased conductivity via hydrogen plasma treatment

You, J. B.; Zhang, X. W.; Cai, P. F.; Dong, J. J.; Gao, Y.; Yin, Z. G.; Chen, N. F.; Wang, R. Z.; Yan, H.
June 2009
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p262105
Academic Journal
The ZnO films deposited by magnetron sputtering were treated by H/O plasma. It is found that the field emission (FE) characteristics of the ZnO film are considerably improved after H-plasma treatment and slightly deteriorated after O-plasma treatment. The improvement of FE characteristics is attributed to the reduced work function and the increased conductivity of the ZnO:H films. Conductive atomic force microscopy was employed to investigate the effect of the plasma treatment on the nanoscale conductivity of ZnO, these findings correlate well with the FE data and facilitate a clearer description of electron emission from the ZnO:H films.


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