Doping-dependent nanofaceting on silicon nanowire surfaces

Fang Li; Nellist, Peter D.; Cockayne, David J. H.
June 2009
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p263111
Academic Journal
Silicon nanowires with axially varying n- and p-doping were grown by the vapor-liquid-solid approach using gold as the catalyst. The nanowire sidewalls exhibit periodic nanofaceting, which is found to be dopant-dependent. It is shown that the nanofaceting occurs during the enhanced sidewall growth that arises when the diborane dopant gas is introduced. The nanowires are axially oriented along <111>, and the crystallographic planes on which the nanofaceting occurs are determined to be {111} and {100}.


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