Thermoelectric evaluation of the dopant density of p-type InAs

Wagener, M. C.; Wagener, V.; Botha, J. R.
June 2009
Applied Physics Letters;6/29/2009, Vol. 94 Issue 26, p262106
Academic Journal
Thermoelectric measurements were performed on p-type InAs thin films grown by metalorganic vapor phase epitaxy. The measured Seebeck coefficient displayed an anomalous temperature dependence due to the existence of a highly conductive surface inversion layer. The effect of a degenerate conduction layer has been incorporated into our analysis and revealed that the sign-reversal temperature of the Seebeck coefficient remained unaffected by the surface layer. This finding consequently facilitated the direct determination of the acceptor density of lightly doped thin film InAs.


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